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Freescale Semiconductor Technical Data
Document Number: MDE6IC7120N Rev. 0, 10/2009
RF LDMOS Wideband Integrated Power Amplifiers
The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. * Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 35.0 34.4 33.8 PAE (%) 42.0 40.6 39.1 Output PAR (dB) 6.2 6.8 6.9 ACPR (dBc) - 39.0 - 41.3 - 37.3
MDE6IC7120NR1 MDE6IC7120GNR1
728 - 768 MHz, 25 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 104 Watts CW Output Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 120 Watts CW Pout * Typical Pout @ 1 dB Compression Point ] 120 Watts CW Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * On - Chip Matching (50 Ohm Input, DC Blocked) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VGS1A RFinA CARRIER (2) RFout1/VDS2A VGS1A GND RFinA GND NC VGS2A VDS1A VDS1B VGS2B NC GND RFinB GND VGS1B
CASE 1866 - 02 TO - 270 WBL - 16 PLASTIC MDE6IC7120NR1
CASE 1867 - 02 TO - 270 WBL - 16 GULL PLASTIC MDE6IC7120GNR1
VGS2A VDS1A VDS1B VGS2B RFinB VGS1B
Quiescent Current Temperature Compensation (1)
PEAKING (2) RFout2/VDS2B
1 2 3 4 5 6 7 8 9 10 11 12 13 14
16
RFout1/VDS2A
15
RFout2/VDS2B
(Top View) Quiescent Current Temperature Compensation (1) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 2. Peaking and Carrier orientation is determined by the test fixture design.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MDE6IC7120NR1 MDE6IC7120GNR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +66 - 0.5, +10 32, +0 - 65 to +150 150 225 30 Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Final Doherty Application Thermal Resistance, Junction to Case Case Temperature 81C, Pout = 28 W CW Stage 1A, 27 Vdc, IDQ1A = 60 mA Stage 1B, 27 Vdc, IDQ1B = 60 mA Stage 2A, 27 Vdc, IDQ2A = 550 mA Stage 2B, 27 Vdc, VG2B = 2.3 Vdc RJC 4.7 3.7 0.90 0.76 C/W Symbol Value (2,3) Unit
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
MDE6IC7120NR1 MDE6IC7120GNR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = IDQ1B = 80 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, Measured in Functional Test) Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 160 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = 550 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = 550 mA, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 407 mA) VGS(th) VGS(Q) VGG(Q) VDS(on) 1 -- 6.6 0.2 1.7 2.8 8.8 0.3 3 -- 11.1 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc VGS(th) VGS(Q) VGG(Q) 1 -- 8 1.7 2.8 11 3 -- 14 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg., f = 748 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio
(3)
Gps PAE PAR ACPR
32.0 38.0 6.2 --
34.4 40.6 6.8 - 41.3
37.0 -- -- - 38.0
dB % dB dBc
Typical Broadband Performance (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg., Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz 1. 2. 3. 4. Gps (dB) 35.0 34.4 33.8 PAE (%) 42.0 40.6 39.1 Output PAR (dB) 6.2 6.8 6.9 ACPR (dBc) - 39.0 - 41.3 - 37.3
Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued)
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, 728 - 768 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 90 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (2) with 4.3 k Gate Feed Resistors ( - 30 to 85C) Gain Flatness in 40 MHz Bandwidth @ Pout = 25 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Stage 1 Stage 2 P1dB IMDsym -- -- 120 3 -- -- W MHz
VBWres IQT GF G P1dB
-- -- -- -- -- --
65 0.012 0.031 1.2 0.034 0.005
-- -- -- -- -- --
MHz % dB dB/C dBm/C
1. Measurement made with device in a Symmetrical Doherty configuration. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
MDE6IC7120NR1 MDE6IC7120GNR1 4 RF Device Data Freescale Semiconductor
R3
VG1
C3
MDE6IC7120N Rev 5
VD2
C17
C19
C13 VG2 VD1 C11 Coupler 1 C12 R1 VD1 VG3 C2 C10 C8 R6 C6 C7 R5 C9 C5 C1 C23 CUT OUT AREA C21 C22 C24 C25 C26 C27
C28 C14
R4 VG1
C4
VD2
C18
C20
Note: Component numbers C15, C16 and R2 are not used.
Figure 3. MDE6IC7120NR1(GNR1) Test Circuit Component Layout
Table 6. MDE6IC7120NR1(GNR1) Test Circuit Component Designations and Values
Part C1, C2, C5, C6, C7, C8 C3, C4, C9, C10, C11, C12 C13, C14, C27, C28 C17, C18 C19, C20 C21, C22 C23, C24 C25, C26 Coupler 1 R1 R3, R4, R5, R6 PCB Description 0.01 F, 50 V Chip Capacitors 1.0 F, 35 V Chip Capacitors 68 pF Chip Capacitors 10 F, 35 V Chip Capacitors 220 F, 50 V Electrolytic Capacitors 18 pF Chip Capacitors 1.0 pF Chip Capacitors 8.2 pF Chip Capacitors 50 , 3 dB Hybrid Coupler 50 , 10 W Termination 4.3 K, 1/4 W Chip Resistors 0.020, r = 3.50 Part Number GCM2195C1H103JA16D GRM32RR71H105KA01K ATC600F680JT250XT GRM55DR61H106KA88L EMVY500ADA221MJA0G ATC600F180GT250XT ATC600F1R0JT250XT ATC600F8R2JT250XT GSC268- HYB0750 RFP - 060120A15Z50- 2 CRCW12064K30FKEA RO4350B Manufacturer Murata Murata ATC Murata Nippon Chemi - Con ATC ATC ATC Soshin Anaren Vishay Rogers
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 5
Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 4. Possible Circuit Topologies
MDE6IC7120NR1 MDE6IC7120GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
PAE 36 Gps, POWER GAIN (dB) Gps 35 VDD = 28 Vdc, Pout = 25 W (Avg.) IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA VG2B = 2.3 Vdc 40 30 20 -30 -35 ACPR 31 710 720 730 740 750 760 770 780 -40 790 ACPR (dBc) PAE, POWER ADDED EFFICIENCY (%) 0 PARC (dB) ACPR (dBc) -1 -2 -3 -20 PAE, POWER ADDED EFFICIENCY (%) -25 -30 -35 -40 -45 -50 37 50
34 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 33 PARC 32
f, FREQUENCY (MHz)
Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 25 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ1A = IDQ1B = 80 mA IDQ2A = 550 mA, VG2B = 2.3 Vdc, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 748 MHz IM3-U -30 IM3-L -40 IM5-U IM5-L
-20
-50 IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100 IM7-L
Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing
50 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 45 Gps, POWER GAIN (dB) 40 35 30 25 20 1 PAE 0 -1 -2 -3 -4 -5 15 PARC VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA IDQ2A = 550 mA, VG2B = 2.3 Vdc, f = 748 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30 45 60 75 90 -1 dB = 28.1 W -2 dB = 44.1 W -3 dB = 61.1 W Gps 20 10 0 30 ACPR 40 60 50
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
36 728 MHz 35 Gps, POWER GAIN (dB) Gps 748 MHz 768 MHz PAE 60 PAE, POWER ADDED EFFICIENCY (%) 50 40 30 20 768 MHz ACPR 30 1 10 Pout, OUTPUT POWER (WATTS) AVG. 748 MHz 728 MHz 10 0 100 -20 -25 -30 -35 -40 -45 -50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6
VDD = 28 Vdc, IDQ1A = IDQ1B = 80 mA 34 IDQ2A = 550 mA, VG2B = 2.3 Vdc Single-Carrier, W-CDMA 33 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability 32 on CCDF 31
Figure 8. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power
40 35 Gain 30 GAIN (dB) 25 20 15 IRL 10 5 0 500 VDD = 28 Vdc, Pin = 0 dBm IDQ1A = IDQ1B = 80 mA IDQ2A = 550 mA, VG2B = 2.3 Vdc 600 700 800 900 1000 1100 1200 -25 -30 -35 1300 -5 -10 -15 -20 IRL (dB) 3.84 MHz Channel BW 0 5 0
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal
Figure 11. Single - Carrier W - CDMA Spectrum MDE6IC7120NR1 MDE6IC7120GNR1 8 RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ1A = IDQB = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg. f MHz 710 720 730 740 750 760 770 780 790 Zin = Zin W 63.51 - j17.96 63.51 - j16.36 63.27 - j14.61 62.90 - j12.86 62.60 - j11.26 62.50 - j9.83 62.73 - j8.61 63.29 - j7.55 64.11 - j6.70 Zload W 2.26 + j2.92 2.43 + j3.05 2.61 + j3.17 2.81 + j3.20 3.04 + j3.21 3.33 + j3.13 3.56 + j2.96 3.73 + j2.75 3.86 + j2.53
Note: Measured with Peaking side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 12. Series Equivalent Input and Load Impedance -- Carrier Side
VDD = 28 Vdc, IDQ1A = IDQB = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 W Avg. f MHz 710 720 730 740 750 760 770 780 790 Zin = Zin W 63.51 - j17.96 63.51 - j16.36 63.27 - j14.61 62.90 - j12.86 62.60 - j11.26 62.50 - j9.83 62.73 - j8.61 63.29 - j7.55 64.11 - j6.70 Zload W 1.58 - j0.62 1.35 - j0.33 1.16 - j0.05 0.95 + j0.19 0.79 + j0.44 0.68 + j0.66 0.56 + j0.87 0.38 + j1.15 0.30 + j1.46
Note: Measured with Carrier side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance -- Peaking Side MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1A = 80 mA, IDQ2A = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 55 54 Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 9 10 11 12 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 728 748 768 P1dB Watts 89 87 78 dBm 49.5 49.4 48.9 P3dB Watts 110 115 105 dBm 50.4 50.6 50.2 f = 768 MHz Actual f = 768 MHz f = 748 MHz f = 728 MHz f = 728 MHz f = 748 MHz Ideal
Test Impedances per Compression Level f (MHz) 728 748 768 P1dB P1dB P1dB Zsource 50.23 - j0.14 50.23 + j1.83 48.78 - j1.26 Zload 1.88 + j0.60 1.92 + j0.10 1.25 + j0.19
Figure 14. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MDE6IC7120NR1 MDE6IC7120GNR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 11
MDE6IC7120NR1 MDE6IC7120GNR1 12 RF Device Data Freescale Semiconductor
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 13
MDE6IC7120NR1 MDE6IC7120GNR1 14 RF Device Data Freescale Semiconductor
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 15
MDE6IC7120NR1 MDE6IC7120GNR1 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2009 * Initial Release of Data Sheet Description
MDE6IC7120NR1 MDE6IC7120GNR1 RF Device Data Freescale Semiconductor 17
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MDE6IC7120NR1 MDE6IC7120GNR1
Rev. 18 0, 10/2009 Document Number: MDE6IC7120N
RF Device Data Freescale Semiconductor

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